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2 半导体基础理论 能带与载流子
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2 半导体基础理论 能带与载流子
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band gap中文是什么意思
中文翻译能带间隙能带隙能隙&&&&n. 1.队，团，群；(盗贼等的)帮，伙。 2.(吹奏) ...&&&&n. 1.(墙壁、篱笆等的)裂口，裂缝；豁口，缺口。 【 ...&&&&禁带收缩&&&&带隙能&&&&带隙基准&&&&能带隙，某材料的导带和价带之间的能量差&&&&直接带隙&&&&直接跃迁半导体&&&&缓变禁带&&&&非竖直带隙&&&&光禁带&&&&就称为光能隙系统&&&&电子能带隙理论&&&&填补空白&&&&n. 1.(墙壁、篱笆等的)裂口，裂缝；豁口，缺口。 【军事】突破口。 2.(意见的)龃龉，分歧；隔阂，距离，差距。 3.山峡，隘口。 4.间隙；【机械工程 ...&&&&a波段; a带&&&&a波段; a带&&&&n. 1.带，绳；带形物；箍；箍条；嵌条；镶边；锯条； 〔pl.〕 (法官等的)宽领带。 2.束缚，羁绊；义务；〔古语〕缧绁，枷，镣，铐(等)。 3.【建筑 ...&&&&s波段&&&&s波段; s频带&&&&S 波段〔一种无线电超高频波段〕。 &&&&t带,端粒带&&&&t带:用t染色法在染色体上产生带&&&&乐队”&&&&缩小差别
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例句与用法Analysis on band gap of one - dimensional photonic crystal一维光子晶体的带隙分析There exists certain photonic band gap in this structure在一定频率还存在禁带。 A novel photonic band gap structure for microstrip lines一种新型微带光子带隙结构Optimum design of electromagnetic band gap structure电磁带隙结构的优化设计A novel bwo with photonic band gap structure具有光子晶体带隙结构的返波振荡器的初步研究Photonic crystals : a new manmade band gap material一种新型人工带隙材料Negative group velocity in the band gap range禁带区域内负的群速度Study on the photonic band gap of one dimensional photonic crystals一维光子晶体的光子带隙研究Colloidal amorphous crystal with a quasi - complete photonic band gap准完全带隙胶体非晶光子晶体Analysis for photonic band gap property of one - dimensional photonic crystal一维光子晶体的带隙分析更多例句：&&1&&&&&&&&&&
百科解释In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors.详细百科解释
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band gap的中文翻译，band gap是什么意思，怎么用汉语翻译band gap，band gap的中文意思，，，发音，例句，用法和解释由查查在线词典提供，版权所有违者必究。
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photonic bandgap materials
光子晶体(Photonic Crystals)又称为光子带隙材料(Photonic Bandgap Materials),是由具有不同介电常数的材料在空间中有序排列形成的介电结构。由于介电常数在空间周期性变化,电磁波在光子晶体中受到调制产
基于24个网页-
光子带隙材料
光子带隙材料
基于3个网页-
光带隙材料
光带隙材料
基于1个网页-
Structural defects can dictate the properties of photonic bandgap materials, adding intentional defects within the crystal are needed.
在实际的应用中，缺陷的结构决定了光子带隙材料的性质，这就需要人为的制造出具有特殊用途的缺陷。
A theoretical investigation is undertaken to study polarization properties in one-dimensional photonic bandgap materials by transfer matrix method.
利用传输矩阵法探讨一维光子晶体中两种不同的偏振模式的特性。
Photonic crystals are a new kind of materials with photonic bandgap, their unique physical features bring about a number of theory research and wide application prospect.
光子晶体是一种具有光子带隙的新型功能材料，它独特的物理性质使得光子晶体具有理论研究价值和广泛的应用前景。
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感谢您的反馈，我们会尽快进行适当修改！InxGa1&xAs thermophotovoltaic cell performance vs bandgap
See all >6 Citations
22.03Masimo SemiconductorAbstractMeasured data is presented on six compositions of indium
gallium arsenide (In
As) thermophotovoltaic (TPV) cells with bandgaps of 0.74, 0.68, 0.64, 0.59, 0.55 and 0.5 eV. The cell structures were identical, the only difference being the bandgap of the cell emitter and base layers. The tradeoff in electrical output versus cell bandgap was examined when the cells were illuminated with a 1000 °C blackbody. The 0.64 eV bandgap (In0.62Ga0.38As) cells had the highest power output, representing a compromise between the higher photocurrent (but higher dark current) lattice‐mismatched lower bandgap cells and the higher photovoltage, lower dark current, lattice‐matched In0.53Ga0.47As higher bandgap cells.Do you want to read the rest of this article?
CitationsCitations6ReferencesReferences0The saturation current determined for a device made of In Ga As underestimates the dark current measured on actual devices by a factor of several orders of magnitude [19], [29]. To obtain realistic performance estimates, therefore, we fit the saturation current to the measured data by adjusting the intrinsic carrier concentration by a factor of 11.32. ABSTRACT: We analyze the feasibility of energy conversion devices that
exploit microscale radiative transfer of thermal energy in
thermophotovoltaic devices. By bringing a hot source of thermal energy
very close to a receiver fashioned as a pn-junction, the near-field
effect of radiation tunneling can enhance the net power flux. We use the
fluctuational electrodynamic approach to microscale radiative transfer
to account for the spacing effect, which provides the net transfer of
photons to the receiver as a function of the separation between the
emitter and receiver. We calculate the power output from the microscale
device using standard thermophotovoltaic device relations. The results
for the performance of a device based on indium gallium arsenide
indicate that a ten-fold increase in power throughput may be realized
with little loss in efficiency. Furthermore, we develop a model of the
microscale device itself that indicates the influence of semiconductor
band-gap, energy, carrier lifetime and dopingArticle · Apr 2002 The saturation current determined for a device made of In Ga As underestimates the dark current measured on actual devices by a factor of several orders of magnitude [19], [29]. To obtain realistic performance estimates, therefore, we fit the saturation current to the measured data by adjusting the intrinsic carrier concentration by a factor of 11.32. ABSTRACT: We analyze the feasibility of energy conversion devices that exploit microscale radiative transfer of thermal energy in thermophotovoltaic devices. By bringing a hot source of thermal energy very close to a receiver fashioned as a pn-junction, the near-field effect of radiation tunneling can enhance the net power flux. We use the fluctuational electrodynamic approach to microscale radiative transfer to account for the spacing effect, which provides the net transfer of photons to the receiver as a function of the separation between the emitter and receiver. We calculate the power output from the microscale device using standard thermophotovoltaic device relations. The results for the performance of a device based on indium gallium arsenide indicate that a ten-fold increase in power throughput may be realized with little loss in efficiency. Furthermore, we develop a model of the microscale device itself that indicates the influence of semiconductor band-gap energy, carrier lifetime, and doping.Article · Feb 2002 ABSTRACT: Low bandgap 0.55 eV (2.25 μm cutoff wavelength) indium gallium
arsenide (In&sub&0.72&/sub&Ga&sub&0.28&/sub&As) thermophotovoltaic (TPV)
cells use much more of the long wavelength energy emitted from low
temperature (&1200°C) thermal sources than either Si or GaSb
cells. Data are presented on a statistically significant number (2500)
of these TPV cells, indicating the performance obtainable in large
numbers of cells. This data should be useful in the design and modeling
of TPV system performance. At 1.2 A/cm&sup&2&/sup& short-circuit
current, an average open-circuit voltage of 283 mV is obtained with a
60% fill factor. The peak external quantum efficiency for uncoated cells
is 65% and is over 50% from 1.1 to 2.2 μm. Internal quantum
efficiency is over 76% in this range assuming an estimated 34%
reflectance loss Full-text · Conference Paper · Jun 1996 ABSTRACT: This paper presents an overview of thermophotovoltaic (TPV) energy
conversion using low band gap semiconductor photovoltaic cells. Physics
of PN junctions related to TPV cells is described and the factors that
affect overall cell efficiencies are outlined. Current status of bulk
and epitaxial growth of TPV materials and cell fabrication issues are
also describedConference Paper · Sep 1996 · IEEE Transactions on Electron Devices ABSTRACT: Thermophotovoltaic (TPV) systems convert low energy photons from
low temperature heat sources into electrical power by means of
photovoltaic cells. This paper describes low-bandgap indium gallium
arsenide (In&sub&x&/sub&Ga&sub&1-x&/sub&As) cells used in such systems
whose composition can be “tuned” to particular wavelengths
of interest. The intent of this paper is to give an overview of these
cells and enough useful data so that TPV system designers can predict
the performance of these cells in particular applications. Data are
presented for 1.65 μm (0.74 eV bandgap, In&sub&0.53&/sub&Ga&sub&0.47
&/sub&As) as well as 2.25 μm (0.55 eV, In&sub&0.72&/sub&Ga&sub&0.28
&/sub&As) cutoff wavelength cells. Cell short-circuit photocurrent
densities up to 5 A/cm&sup&2&/sup& and open-circuit voltages over 480 mV
(0.74 eV cells) and 310 mV (0.55 eV) are obtainable. Measured
responsivity, dark current, and series resistance are presented and are
used to numerically determine maximum output power for 0.55 eV and 0.74
eV InGaAs cells at blackbody temperatures of 1000 to 1500°CConference Paper · Sep 1996 · IEEE Transactions on Electron Devices ABSTRACT: An InGaAs monolithic interconnected module (MIM) using reflective spectral control has been fabricated and measured in a thermophotovoltaic radiator/module system (radiator, optical cavity, and thermophotovoltaic module). Results showed that at a radiator and module temperature of 1039°C and 25°C, respectively, 23.6% thermophotovoltaic radiator/module system radiant heat conversion efficiency and 0.79W/cm&sup&2&/sup& maximum thermophotovoltaic radiator/module system power density were obtained. The use of reflective spectral control increased the spectral efficiency and thus the thermophotovoltaic radiator/module system radiant heat conversion efficiency by ~16% (relative). However, the amount of useful radiation reaching the MIM decreased by ~7% (relative) compared to using transmissive spectral control. Also, the thermophotovoltaic system radiant heat conversion efficiency and maximum power density using either transmissive or reflective spectral control decreased as the MIM temperature increased. The MIM using reflective spectral control was found to be more sensitive to changes in the MIM temperature than the MIM using transmissive spectral control.Article · Apr 2004 +1 more author... Full-text · Article · Mar 1999 +1 more author...Article · Energy Conversion and Management Article · Nov 2016 +1 more author...Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.This publication is from a journal that may support self archiving.君，已阅读到文档的结尾了呢~~
介绍了如何使用积分球测定光敏材料（荧光材料、光催化剂等）的bandgap
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bandgap 测试计算方法
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