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435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
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A report is presented on high transconductance Gm measured on AlGaN/GaN HEMTs with a 12.5 nm-thick AlGaN barrier layer, grown on high resistivity silicon substrate using the MOCVD growth technique. 105 nm T-gate transistors were successfully fabricated using Pt/Ti/Pt/Au Schottky contact. Maximum current density of 723 mA/mm, current gain cutoff frequency of 80 GHz and maximum power gain cutoff frequency of 153 GHz are achieved. The devices feature a record peak extrinsic transconductance of 435 mS/mm which to the authors& knowledge is the highest reported value for AlGaN/GaN HEMTs grown on Si (111). Different gate-source (Lgs) and drain-source (Lds) spacing were also designed to study their influence on the electrical device characteristics. The devices were fabricated in the framework of a tight collaborative project between OMMIC and IEMN.
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References
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mos1ex06SubstrateandGateCurrentExtraction衬底和栅极电流的提取.docx 7页
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mos1ex06.in:SubstrateandGateCurrentExtraction衬底和栅极电流提取这是的MOSATHENA/DEVEDIT的/ATLAS接口的例子模拟衬底和栅极电流与栅极偏置使用能量平衡和碰撞电离模型。这个例子说明：过程模拟的MOS晶体管在ATHENA?工艺参数提取（如氧化层的厚度）?ATHENA和DEVEDIT之间autointerface?网格重划使用DEVEDIT?autointerface之间DEVEDIT和ATLAS?解决方案与VDS=3.3VVgs下坡道?最大栅和衬底电流参数提取过程模拟，工艺参数提取和电极定义为这个例子完全一样，在本节中的第一个例子。碰撞电离效应的ATLAS模拟电网的要求比前面所述的低电场的情况下更严格的，。DEVEDIT用于ATHENA结构的重新划分网格，然后再进行阿特拉斯。DEVEDIT有两种模式。图形模式允许用户绘制和交互编辑区域和杂质。这里使用的批处理模式执行这些类似的结构和网状命令。由DEVEDIT使用的语法描述在DEVEDIT手册。它可以构建从DeckBuild中命令菜单，或最常用的网格编辑一个图形会议期间提出的，可以作为保存“命令文件”从对DEVEDIT的保存菜单。imp.refine命令指定杂质regrids。这里REGRID净掺杂执行。constr.mesh命令定义的基地网。细化命令内指定在每个语句的坐标指定的箱网精炼。ATLAS模拟包含类似的语法简单的例子，在本节前面所述。电子的能量平衡方程的解决方案指定由的参数hcte.el的喜参数?指定的热载流子注入模型，使栅极电流。相当于hcte.ho和HHI孔的存在，但并不需要在NMOS模拟。碰撞电离模型选择影响报告书。的的参数lrel.el设置在这个模型中的电子弛豫时间。虽然喜模型是直接负责的栅电流，有没有“特殊”的模型模拟衬底电流。运行栅极电压高的漏极偏置扫描和碰撞电离和能量平衡，包括提供一切必要的物理。衬底电流可以简单地从日志文件中绘制的漏电流以类似的方式。无衬底电流的特殊需要提取。在此运行使用的语句提取?提取衬底和栅极电流的峰值和位置。第一峰值电流测量值。这个结果，然后用在当前的搜索找到的栅极电压，电流测量。加载和运行这个例子，选择的负载例如在DeckBuild中的按钮。这将复制输入文件到当前工作目录和任何支持文件。选择运行按钮来执行的例子。goathenalinexloc=0spac=0.1linexloc=0.2spac=0.01linexloc=0.5spac=0.01#lineyloc=0.00spac=0.01lineyloc=0.2spac=0.01lineyloc=0.5spac=0.05lineyloc=0.8spac=0.15#initorientation=100c.phos=1e14space.mul=3#pwellformationincludingmaskingoffofthenwell#diffustime=30temp=1000dryo2press=1.00hcl=3#etchoxidethick=0.02##P-wellImplant#implantborondose=8e12energy=100pears#diffustemp=950time=100weto2hcl=3##N-wellimplantnotshown-##welldrivestartsherediffustime=50temp=1000t.rate=4.000dryo2press=0.10hcl=3#diffustime=220temp=1200nitropress=1#diffustime=90temp=1200t.rate=-4.444nitropress=1#etchoxideall##sacrificial&cleaning&oxidediffustime=20temp=1000dryo2press=1hcl=3#etchoxideall##gateoxidegrownhere:-diffustime=11temp=925dryo2press=1.00hcl=3####vtadjustimplantimplantborondose=9.5e11energy=10pearson#depopolythick=0.2divi=10##fromnowonthesituationis2-D#etchpolyleftp1.x=0.35#methodfermicompressdiffusetime=3temp=900weto2press=1.0#implantphosphordose=3.0e13energy=20pearson#depooxidethick=0.120divisions=8
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p substrate
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p-Si(111)衬底
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This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type.
这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。
P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate.
一P型场效晶体管包括有一置于该P型衬底内的一第二N型嵌入层与该P型外延层。
The optimized immersion gold plating bath contains an organic additive which can slow down initiatory deposition rate, result in a slow dissolution of Ni-P substrate.
此工艺含有能够减缓镀金初始时沉积速率，又能降低对镍层腐蚀的添加剂。
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